庄闲和游戏官网

CN EN
Home
About Us
Newpros
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter Back
 PDF

Introduction Yangjie Technology recently launched a new generation of TO-247PLUS packaged 160A 650V discrete IGBT. The product adopts 1.6um micro-pattern trenches process platform, greatly improving power density，having low conduction and switching loss. It provides high-power discrete IGBT solutions for the photovoltaic inverter and
energy storage inverter.
Features 1. Adopting 1.6um micro-pattern trenches process platform；
2. 650V breakdown voltage,Ic=160A@Tc=100℃；
3. Low conduction loss,low switching loss；
4. Copacked with Very?soft,fast?recovery?antiparallel?diode；
SPECIFICATION

DGQ160N65CTS2A

Related new products

High-side+Low-side PDFN5060 N30V Mosfet for PC Mainboard

N100V MOSFET for Automotive Electronic Applications

SKBPC75 High Current Three Phase Bridge Rectifiers

SMB-W Package EM540BG

ESD Products for Panel Ports

N150V MOSFET for Industrial Control

TO-220AC Internal Insulated Package Series Ultra-Fast Recovery Diode

IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application

ESDM Series ESD Protection Diodes with Ultra-low Junction Capacitance Value of 0.05 pF

650V Super Junction N-Channel MOSFET
网站地图