庄闲和游戏官网

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；
4、Low conduction loss, low switching loss, high reliability；
5、Use environmentally friendly materials and meet RoHS standards；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；
3、High voltage 650V；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；
5、The latest generation of micro trench design, a cost-effective product；
SPECIFICATION

DGW50N65CTL0

Related new products

N100V MOSFET for Automotive Electronic Applications

New N40V SGT MOSFETs for Sweeper

Portable energy storage power supply special plug-in type fast recovery bridge

New N100V MOSFET for PD Power Supply

P60V MOSFET for Automotive Electronics

YBS2G Gulling Patch Rectifier Bridge

GBU Package Extended 35A-50A High Current Series Products

IGBT 50A/75A 1200V Discrete for Industrial Control

Low VCE(sat)?3A?Bipolar?Transistor

LFPAK56D MOSFET for Automotive
网站地图