庄闲和游戏官网

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
PDF

Introduction 1、TO-247package 50A 650V IGBT discrete ;
2、The voltage level is 650V, the current level is 50A@Tc=100℃ ;
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications ;
4、Low conduction loss, low switching loss, high reliability ;
5、Use environmentally friendly materials and meet RoHS standards ;
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ;
3、High voltage 650V ;
4、Low conduction loss, low switching loss, meet the high frequency application conditions ;
5、The latest generation of micro trench design, a cost-effective product ;
SPECIFICATION

DGW50N65CTL0

Related new products

MMBZ Series ESD with Voltage Regulation Characteristics

SOD-323HE Package Transient Voltage Suppressors

High current patch rectifier bridge

Low Power SCR&TRIAC for Leakage Protection

SGT MOSFET for PV Microinverter

Micro-pattern Trenches IGBT for Hair Removal Device

Rectifier bridge design optimization New package: PB-A

IGBT 50A 1200V Discrete for Industrial Control

TOLT-Packaged Power MOSFET for Clean Energy

50uA SOD-523 Package Small Signal Zener Diode
网站地图