Yangjie Technology has recently launched 1200V 120m¦¸ SiC MOSFET products, available in three package types: TO-247AB, TO-247-4L, and TO-263-7L. Designed for power electronics applications that demand ultimate energy efficiency and system compactness, these devices perfectly balance conduction loss and switching performance, making them an ideal replacement for traditional silicon-based super-junction MOSFETs

Leveraging the physical properties of silicon carbide (SiC), this device features extremely low parasitic capacitance and ultra-fast switching speed. Its body diode has an exceptionally low reverse recovery charge (Qrr), which significantly reduces switching losses, enabling power supply systems to easily achieve high-frequency designs and greatly improve power density.

The device supports operation at junction temperatures up to 175¡ãC. Compared to silicon devices of equivalent specifications, it greatly reduces heatsink size and even enables fanless cooling in some low power density designs, thereby lowering overall system cost.